半導体メモリ素子のキャパシタの製造方法

Japanese Patent JP4406784

B2

The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of providing a semiconductor substrate where a plug polysilicon film and a metal barrier film consisting of Ti/TiN film have been sequentially filled in a contact hole of an interlayer insulation film, forming a cap oxide film on the semiconductor substrate, patterning the cap oxide film to define a capacitor region and to expose the interlayer insulation film and the metal barrier film, forming a nitride film over the whole substrate according to a plasma treatment using NH3 gas, depositing an Ru film for a lower electrode on the nitride film, forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and the nitride film, and removing the cap oxide film, depositing an amorphous TaON film on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

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JP5263514	Surface coating cutting tool with excellent chipping resistance due to the hard coating layer

Golden people
Song Han

JP2001163267A

February 03, 2010

May 30, 2001

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HYNIX SEMICONDUCTOR INC.

C23C16/30; H01L21/8242; H01L21/02; H01L21/285; H01L21/314; H01L21/318; H01L27/108; H01L21/321

JP7263431A
JP9102591A
JP11017153A
JP7169917A
JP2000124423A

WO2000014796A1
WO2000012776A1
WO1999066558A1
WO2000022664A1

Eiji Saegusa
Kakehi Yuro
Takeshi Ohara
Hiroji Nakagawa
Yasumitsu Tate
Kenji Saito
Jun Fujii
Hitoshi Seki
Mutsuko Nakano
Shinichi Mashita
Ryuji Inuchi

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