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Patent Searching and Data


Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4435069
Kind Code:
B2
Abstract:

To provide a pattern generation method capable of increasing the pattern coverage rate of the peripheral region of an isolated pattern.

After a wiring pattern arranged on an interlayer dielectric film and the wiring layout and hole layout of a hole pattern embedded in the interlayer dielectric film are obtained, the hole pattern is extracted, which is connected with the wiring pattern from the hole layout in a pattern processing region where the wiring pattern is arranged in the same wiring layer. A primary processing region is extracted so that the hole pattern may be included, and the pattern coverage rate of the wiring pattern included in the primary processing region is computed. After that, additional patterns are generated in the primary processing region based on the pattern coverage rate.

COPYRIGHT: (C)2006,JPO&NCIPI


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Inventors:
Masaaki Hatano
Nishioka
Fujimaki Tsuyoshi
Motoya Okazaki
Junichi Wada
Naofumi Kaneko
Wako Higashi
Kenji Yoshida
Noriaki Matsunaga
Application Number:
JP2005321571A
Publication Date:
March 17, 2010
Filing Date:
November 04, 2005
Export Citation:
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Assignee:
Toshiba Corporation
Toshiba Microelectronics Co., Ltd.
International Classes:
H01L21/3205; G06F17/50; H01L21/768; H01L21/82; H01L23/52
Domestic Patent References:
JP63025952A
JP9321044A
JP11297817A
JP4218918A
JP11340321A
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Kawamata Sumio
Nakamura Tomoyuki
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu