Title:
多層拡張ドレイン構造を有する高電圧縦型トランジスタ
Document Type and Number:
Japanese Patent JP4436598
Kind Code:
B2
Abstract:
A high-voltage transistor (80) with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions (87) disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions (82) separated from field plate members (84) by one or more dielectric layers (88). With the field plate members at the lowest circuit potential, the transistor supports high voltages applied to the drain in the off-state. An insulated gate (90,113) is disposed between the field plate members (84) and body regions (86).
Inventors:
Donald ray disney
Application Number:
JP2002258266A
Publication Date:
March 24, 2010
Filing Date:
July 31, 2002
Export Citation:
Assignee:
Power Integrations Incorporated
International Classes:
H01L29/78; H01L29/786; H01L21/336; H01L29/06; H01L29/40; H01L29/417; H01L29/423
Domestic Patent References:
| JP2001085688A | ||||
| JP2000349288A | ||||
| JP2001044424A | ||||
| JP9266311A | ||||
| JP64082567A | ||||
| JP11506267A |
Foreign References:
| WO2000014807A1 |
Attorney, Agent or Firm:
Minoru Nakamura
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda