フォトマスクの製造方法 - Renesas Technology Corp.

Title:

フォトマスクの製造方法

Document Type and Number:

Japanese Patent JP4442962

Kind Code:

B2

Abstract:

A corrected irradiation region (14) to be irradiated with a laser light under given output conditions to remove an opaque extension defect (13) is set to include: {circumflex over (1)} an irradiation region (14A) containing the opaque extension defect (13) and having widths w1 and w2 and {circumflex over (2)} a pattern repaired region (14B) having the width w2 and extending in the negative direction in a first direction D1 by the absolute value of a quantity of bias offset of repairing DELTAw from the connection between the opaque extension defect (13) and the pattern edge (12E). The quantity of correction offset DELTAw is set so that the dimensional variation rate of the resist pattern transferred falls within a range permitted for the device quality. Part of the pattern edge (12E) is missing by the width |DELTAw| after the irradiation of laser light. When the design pattern dimension as dimensional value on the photomask is reduced to about 1 mum, for example, it is thus possible to alleviate the adverse effect of the dimensional variation of the resist pattern on the device quality that is caused by a reduction in transmittance in the repaired defect portion.

Inventors:

Mimura Nagamura
Suzuki Kazuto
Kunihiro Hosono
Nobuyuki Yoshioka

Application Number:

JP29670599A

Publication Date:

March 31, 2010

Filing Date:

October 19, 1999

Export Citation:

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