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Title:
発光装置
Document Type and Number:
Japanese Patent JP4467876
Kind Code:
B2
Abstract:

To improve reliability of a light emitting device where a TFT is coupled with an organic light emitting element.

As components of a light emitting device 1200, a TFT 1201 and an organic light emitting element 1202 are formed on the same substrate 1203. A first insulating film 1205 functioning as a blocking layer is formed on the substrate 1203 side of the TFT 1201, and a second insulating film 1206 is formed as a protective film on the opposite upper layer side. On the lower layer side of the organic light emitting element 1202, a third insulating film 1207 functioning as a barrier film is formed. The third insulating film 1207 is formed from such inorganic insulating film as a silicon nitride film, a silicon oxynitride film, an aluminum nitride, aluminum oxide, and aluminum oxynitride. A fourth insulating film 1208 and a barrier wall layer 1209 formed on the upper layer side of the organic light emitting element 1202 are formed from the same inorganic insulating film.

COPYRIGHT: (C)2004,JPO


Inventors:
Shunpei Yamazaki
Toru Takayama
Application Number:
JP2002314381A
Publication Date:
May 26, 2010
Filing Date:
October 29, 2002
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G09F9/30; H05B33/22; H01L21/8234; H01L27/08; H01L27/088; H01L29/786; H01L51/50; H05B33/04; H05B33/14
Domestic Patent References:
JP2001076873A
JP2001203076A
JP2001052873A
JP5044017A
JP8241047A