窒化物半導体薄膜の作製方法 - Nippon Telegraph and Telephone Corporation

Title:

窒化物半導体薄膜の作製方法

Document Type and Number:

Japanese Patent JP4468744

Kind Code:

B2

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Inventors:

Takashi Kobayashi
Yokoyama Haruki
Masanobu Hiroki
Toshiki Makimoto
Kazuhide Kumakura

Application Number:

JP2004176527A

Publication Date:

May 26, 2010

Filing Date:

June 15, 2004

Export Citation:

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Assignee:

Nippon Telegraph and Telephone Corporation

International Classes:

H01L21/20

Domestic Patent References:

JP2003324068A
JP2141495A
JP10247626A
JP2001247399A

Other References:

Hyun-Jeong Kim et. al.,Effects of reactive ion beam treatment of a sapphire surface to optimite the deposition of GaN films,JOURNAL OF APPLIED PHYSICS,米国,American Institute of Physics,2000年 6月 1日,VOLUME 87, NUMBER 11,7940-7945

Attorney, Agent or Firm:

Masaki Yamakawa
Hiroro Kurokawa
Shigeki Yamakawa

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