Title:
半導体積層構造物と窒化物半導体結晶基板及び窒化物半導体素子の製造方法
Document Type and Number:
Japanese Patent JP4490953
Kind Code:
B2
Abstract:
In a semiconductor laminated structure, a base substrate has a nitride semiconductor crystal plane in an upper surface thereof. A growth blocking film encloses a flow-through pattern which is extended horizontally on the base substrate at a predetermined interval. A nitride semiconductor crystal layer is formed on the base substrate to contact the upper surface thereof between regions of the flow-through pattern and covers the grow blocking film. The semiconductor laminated structure is employed to obtain a nitride semiconductor crystal layer, nitride semiconductor crystal substrate and nitride semiconductor device exhibiting fewer defects and high quality.
Inventors:
Xu Xiaoyuan
Masayoshi Koike
Zhang Huang
Lee Shu People
Liang bell next door
Prosperity
Masayoshi Koike
Zhang Huang
Lee Shu People
Liang bell next door
Prosperity
Application Number:
JP2006222864A
Publication Date:
June 30, 2010
Filing Date:
August 18, 2006
Export Citation:
Assignee:
Samsung Electric Co., Ltd.
International Classes:
H01L21/205; C30B29/38; H01L33/22; H01L33/32; H01L33/36
Domestic Patent References:
| JP2000223786A | ||||
| JP2005191286A |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Masakazu Ito
Yuko Hara
Masakazu Ito
Yuko Hara