To provide a thin-film wiring, wherein Ag and Cu with low electric resistance desired as a wiring material of electronic components are improved in such defects that the adhesion to a substrate, heat resistance, and corrosion resistance are low, and wherein it is provided with low electrical resistance, resistance to heat, and corrosion resistance, and along with the contact properties with respect to a substrate and patterning properties.

The thin-film wiring is made by are laminating a film, having Cu or Ag as a main body and an alloy film having Mo as the main body and V and/or Nb. Further, the thin film wiring is made such that the film having Cu or Ag as the main body is used as an intermediate layer, and upper and lower layers of the intermediate layer are formed with the alloy film containing Mo and V and/or Nb, and these three layers are laminated. The thin film wiring is further adapted such that Ni and/or Cu are/is added to the Mo alloy film.

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