Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP4503095
Kind Code:
B2
Abstract:
A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.
Inventors:
Kiyono Takuya
Ikemoto Manabu
Taiki Date
Ikemoto Manabu
Taiki Date
Application Number:
JP2009513951A
Publication Date:
July 14, 2010
Filing Date:
May 15, 2007
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
H01L21/304; H01L21/31; H01L21/316; H01L29/78
Domestic Patent References:
| JP2003179049A | 2003-06-27 | |||
| JP2004063521A | 2004-02-26 | |||
| JPH0496226A | 1992-03-27 |
Attorney, Agent or Firm:
Okabe
Masao Okabe
Nobuaki Kato
Asahi Shinmitsu
Katsumi Miyama
Masao Okabe
Nobuaki Kato
Asahi Shinmitsu
Katsumi Miyama