Title:
注入装置のリボン形状イオンビームの特性制御
Document Type and Number:
Japanese Patent JP4509781
Kind Code:
B2
Abstract:
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
Inventors:
Parser, Kenneth, H.
Enge, Harold, A.
Turner, Norman, Elle.
Enge, Harold, A.
Turner, Norman, Elle.
Application Number:
JP2004521941A
Publication Date:
July 21, 2010
Filing Date:
July 17, 2003
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates Incorporated
International Classes:
H01J37/141; H01J37/317; H01J37/08; H01J37/14; H01J37/147; H01J37/315; H01L21/425
Domestic Patent References:
| JP2000505234A | ||||
| JP1319242A | ||||
| JP11271497A | ||||
| JP51052890A |
Other References:
HAND,"Magnetic Quadrupole with Rectangular Aperture",THE REVIEW OF SCIENTIFIC INSTRUMENTS,1959年10月,V30 N10,P927-930
Attorney, Agent or Firm:
Junji Endo