Title:
半導体ウェーハの露出面を研磨する方法
Document Type and Number:
Japanese Patent JP4515316
Kind Code:
B2
Abstract:
A method of modifying an exposed surface of a semiconductor wafer that includes the steps of: (a) contacting the surface with a fixed abrasive article having a three-dimensional textured abrasive surface that includes a plurality of abrasive particles and a binder in the form of a pre-determined pattern; and (b) relatively moving the wafer and the fixed abrasive article to modify said surface of the wafer.
Inventors:
Wesley Jay Brooksbourg
Scott Earl Color
Quuk-Lung Ho
David A. Kaisaki
Karl Earl Kessel
Thomas Pea Clan
Heather Kay Kranz
Robert Pee Messner
Richard Jay Webb
Julia P. Williams
Scott Earl Color
Quuk-Lung Ho
David A. Kaisaki
Karl Earl Kessel
Thomas Pea Clan
Heather Kay Kranz
Robert Pee Messner
Richard Jay Webb
Julia P. Williams
Application Number:
JP2005120129A
Publication Date:
July 28, 2010
Filing Date:
April 18, 2005
Export Citation:
Assignee:
3M COMPANY
International Classes:
B24B1/00; B24B7/22; H01L21/304; B24B21/04; B24B37/04; B24B53/007; B24B53/017; B24D3/00; B24D3/02; B24D3/28; B24D11/00; H01L21/3105
Domestic Patent References:
| JP6254772A | ||||
| JP699359A | ||||
| JP655459A | ||||
| JP6505200A | ||||
| JP5652183A |
Attorney, Agent or Firm:
Mitsuo Tanaka
Takuji Yamada
Muneo Yamamoto
Takuji Yamada
Muneo Yamamoto