Title:
半導体デバイスの製造
Document Type and Number:
Japanese Patent JP4521719
Kind Code:
B2
Abstract:
A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers ( 11,13,15,17 ) with each pair of barrier layers being separated by a quantum well layer ( 12,14,16 ), comprises annealing each barrier layer ( 11,13,15,17 ) separately. Each barrier layer ( 11,13,15,17 ) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.
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Inventors:
Stewart Hooper
Valerie bouquet
Catherine El Johnson
Jonathan Hefanan
Valerie bouquet
Catherine El Johnson
Jonathan Hefanan
Application Number:
JP2004314862A
Publication Date:
August 11, 2010
Filing Date:
October 28, 2004
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01S5/343; H01L21/00; H01L21/20; H01L21/205; H01L33/00; H01L33/04; H01L33/06; H01S5/02
Domestic Patent References:
| JP2003289156A | ||||
| JP2002043618A | ||||
| JP10126006A | ||||
| JP2002261391A | ||||
| JP3255617A |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaaki Yasumura
Takeshi Oshio