Title:
研磨した半導体ウェーハの製造方法
Document Type and Number:
Japanese Patent JP4532521
Kind Code:
B2
Abstract:
Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps: a mechanical processing step, an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 μm in total.
Inventors:
Maximilian Stadler
Gunter Schwab
Diego Feijoo
Karl Heinz Langsdorf
Gunter Schwab
Diego Feijoo
Karl Heinz Langsdorf
Application Number:
JP2007122452A
Publication Date:
August 25, 2010
Filing Date:
May 07, 2007
Export Citation:
Assignee:
Siltronic AG
International Classes:
H01L21/302; C30B29/06; H01L21/304
Domestic Patent References:
| JP2002329690A | ||||
| JP1140540A | ||||
| JP200021862A |
Foreign References:
| DE10210023A1 |
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Hiroshi Sugimoto
Einzel Felix-Reinhard
Reinhard Einsel
Toshiomi Yamazaki
Takuya Kuno
Hiroshi Sugimoto
Einzel Felix-Reinhard
Reinhard Einsel