Title:
露光量制御用フォトマスクおよびその製造方法
Document Type and Number:
Japanese Patent JP4557242
Kind Code:
B2
Abstract:
The present invention relates to an exposure controlling photomask used to form a three-dimensional face structure in a resist pattern and having a light interrupting film able to be continuously controlled in transmitted light amount from 100% to 0%, and a production method thereof. A light interrupting film 2 is deposited on a substrate 3 , and a photosensitive material 6 is coated on this light interrupting film 2 . Next, irradiation is performed by changing the irradiating amount of an electron beam every place of the photosensitive material 6 using an electron beam exposure technique. Next, development is performed and the photosensitive material is formed in the three-dimensional face structure. Next, in an etching process, the three-dimensional face structure is transferred to the light interrupting film 2 by etching-back the photosensitive material 6 and the light interrupting film 2 as a foundation.
Inventors:
Takashi Nishi
Application Number:
JP2001568133A
Publication Date:
October 06, 2010
Filing Date:
March 14, 2001
Export Citation:
Assignee:
Takashi Nishi
International Classes:
G03F1/54; G03F1/70; G03F1/80; G03F7/00; H01L21/027; H01L31/0232; H01L27/146
Domestic Patent References:
| JPH11237625A | 1999-08-31 | |||
| JPH08504515A | 1996-05-14 | |||
| JPH07211614A | 1995-08-11 | |||
| JPH08504973A | 1996-05-28 | |||
| JPH05142752A | 1993-06-11 | |||
| JPH11504264A | 1999-04-20 | |||
| JPH07230159A | 1995-08-29 | |||
| JPS6420628A | 1989-01-24 | |||
| JPS5794706A | 1982-06-12 | |||
| JP2002139823A | 2002-05-17 |
Attorney, Agent or Firm:
Yoshinao Nakano