半導体デバイス及びその製造方法

Title:

半導体デバイス及びその製造方法

Document Type and Number:

Japanese Patent JP4557507

Kind Code:

B2

Abstract:

To provide a semiconductor device which is manufactured at a low cost while securing high yield by using a wide band gap semiconductor.

A semiconductor module comprises a segment 1 (semiconductor element) capable of operating severally on an SiC substrate. The segment 1 comprises a source electrode pad 2 and a gate electrode pad 3 provided on a principal surface side of the SiC substrate, and a drain electrode pad provided on a rear surface side of the SiC substrate. An element separating region for such as a trench and a Schottky diode, etc. for electrically separating adjoining segments 1 is provided. Only the electrode pads 2 and 3 of the segment 1 which is identified as a nondefective are connected to electrode terminals 41 and 43.

Inventors:

Makoto Kitabatake
Osamu Kusumoto
Masao Uchida
Kunikata Takahashi
Kenya Yamashita

Application Number:

JP2003168711A

Publication Date:

October 06, 2010

Filing Date:

June 13, 2003

Export Citation:

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Assignee:

Panasonic Corporation

International Classes:

H01L27/04; H01L21/60; H01L29/872; H01L21/76; H01L21/8234; H01L27/06; H01L29/12; H01L29/47; H01L29/78

Domestic Patent References:

JP2001053275A
JP2210866A
JP2001135820A
JP2001111048A

Attorney, Agent or Firm:

Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada

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