Title:
MOSFETとその製造方法
Document Type and Number:
Japanese Patent JP4558911
Kind Code:
B2
Abstract:
A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.
Inventors:
Jiang Tan
Ashraf Waggie Lotofi
Ashraf Waggie Lotofi
Application Number:
JP2000307041A
Publication Date:
October 06, 2010
Filing Date:
October 06, 2000
Export Citation:
Assignee:
Alcatel-Lucent USA Inc.
International Classes:
H01L29/78; H01L21/336; H01L29/20
Domestic Patent References:
| JP2033938A | ||||
| JP1010671A | ||||
| JP9283747A | ||||
| JP10242465A | ||||
| JP10098185A | ||||
| JP49011280A |
Attorney, Agent or Firm:
Okabe
Masao Okabe
Nobuaki Kato
Shinichi Usui
Takao Ochi
Asahi Shinmitsu
Masao Okabe
Nobuaki Kato
Shinichi Usui
Takao Ochi
Asahi Shinmitsu