Title:
CMOSイメージセンサの製造方法
Document Type and Number:
Japanese Patent JP4575913
Kind Code:
B2
Abstract:
Provided is a method for fabricating CMOS image sensor. One method includes: preparing a semiconductor substrate in which a photodiode region and a transistor region are defined; sequentially forming an insulating layer and a conductive layer on an entire surface of the semiconductor substrate; forming a photoresist pattern for a gate electrode on the conductive layer; etching the conductive layer to a predetermined thickness using the photoresist pattern as a mask; performing an ion implantation process on the etched conductive layer to form a doped conductive layer; performing an oxidation process on the resultant structure including the doped conductive layer for oxidizing the doped conductive layer so as to form an oxide layer; and removing the oxide layer and the insulating layer disposed thereunder to define a gate electrode and a gate insulating layer.
Inventors:
Sim, hee sung
Application Number:
JP2006344400A
Publication Date:
November 04, 2010
Filing Date:
December 21, 2006
Export Citation:
Assignee:
Tobu Electronics Co., Ltd.
International Classes:
H01L27/146
Domestic Patent References:
| JP2004214665A | ||||
| JP2004247444A | ||||
| JP6005565A |
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa
Shigeki Yamakawa