Title:
炭化珪素半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP4577355
Kind Code:
B2
Abstract:
A SiC semiconductor device includes: a substrate; a drift layer on the substrate; a trench on the drift layer; a base region in the drift layer sandwiching the trench; a channel between the base region and the trench; a source region in the base region sandwiching the trench via the channel; a gate electrode in the trench via a gate insulation film; a source electrode coupled with the source region; a drain electrode on the substrate opposite to the drift layer; and a bottom layer under the trench. An edge portion of the bottom layer under a corner of a bottom of the trench is deeper than a center portion of the bottom layer under a center portion of the bottom of the trench.
Inventors:
Eiichi Okuno
Giant Suzuki
Nobuyuki Kato
Giant Suzuki
Nobuyuki Kato
Application Number:
JP2007334104A
Publication Date:
November 10, 2010
Filing Date:
December 26, 2007
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| JP2005236627A | ||||
| JP2003318409A | ||||
| JP10098188A | ||||
| JP2003069040A | ||||
| JP2000332239A |
Attorney, Agent or Firm:
Yoji Ito
Takahiro Miura
Fumihiro Mizuno
Takahiro Miura
Fumihiro Mizuno