Title:
電荷結合素子
Document Type and Number:
Japanese Patent JP4583565
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a charge-coupled device comprising an FET switch having an input range on a negative side is wide for easy driving. SOLUTION: An FET switch 12 comprises a floating source electrode 33, a drain electrode 36 connected to a power source, a first gate electrode 34 which is provided between the drain electrode and the source electrode and applied with a DC bias, and a second gate electrode, which is provided between the first gate electrode and the drain electrode and applied with a reset signal. The pinch-off voltage of the first gate electrode 34 is set deeper than that of the second gate electrode 35.
Inventors:
Shintaro Takita
Application Number:
JP2000275878A
Publication Date:
November 17, 2010
Filing Date:
September 12, 2000
Export Citation:
Assignee:
New Japan Radio Co., Ltd.
International Classes:
H01L27/148; H04N5/335; H04N5/341; H04N5/357; H04N5/369; H04N5/372
Domestic Patent References:
| JP6151798A | ||||
| JP11150685A | ||||
| JP62065571A | ||||
| JP63209175A | ||||
| JP2001119015A | ||||
| JP2001060683A |
Attorney, Agent or Firm:
Tsuneaki Nagao