Title:
シリコンを含む膜のドライエッチング方法
Document Type and Number:
Japanese Patent JP4596287
Kind Code:
B2
Abstract:
A silicon compound film is dry etched by parallel-plate type dry etching using an etching gas including at least COF2.
Inventors:
Hisao Tosaka
Application Number:
JP2008240537A
Publication Date:
December 08, 2010
Filing Date:
September 19, 2008
Export Citation:
Assignee:
CASIO COMPUTER CO.,LTD.
International Classes:
H01L21/3065; H01L21/336; H01L29/786
Domestic Patent References:
| JP2000195848A | ||||
| JP10223614A | ||||
| JP11274143A | ||||
| JP2003045891A | ||||
| JP5226654A | ||||
| JP2003101029A | ||||
| JP2006024823A | ||||
| JP2008300478A |
Attorney, Agent or Firm:
Hidemi Kashima