III族窒化物系化合物半導体発光素子の製造方法

Title:

III族窒化物系化合物半導体発光素子の製造方法

Document Type and Number:

Japanese Patent JP4600080

Kind Code:

B2

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Inventors:

Tetsuya Taki
Mitsuhisa Ikukawa
Maoto Aoki
Koji Okuno
Yusuke Toyota

Application Number:

JP2005046282A

Publication Date:

December 15, 2010

Filing Date:

February 22, 2005

Export Citation:

Assignee:

Toyoda Gosei Co., Ltd.

International Classes:

H01L33/32; H01L33/06; H01L33/10; H01L33/12; H01L33/42

Domestic Patent References:

JP2003115642A

Attorney, Agent or Firm:

Osamu Fujitani

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