Title:
半導体デバイス
Document Type and Number:
Japanese Patent JP4606525
Kind Code:
B2
Abstract:
Metal semiconductor nitride gate electrodes (40, 70) are formed for use in a semiconductor device (60). The gate electrodes (40, 70) may be formed by sputter deposition, low pressure chemical vapor deposition (LPCVD), or plasma enhanced chemical vapor deposition (PECVD). The materials are expected to etch similar to silicon-containing compounds and may be etched in traditional halide-based etching chemistries. The metal semiconductor nitride gate electrodes (40, 70) are relatively stable, can be formed relatively thinner than traditional gate electrodes (40, 70) and work functions near the middle of the band gap for the material of the substrate (12).
Inventors:
Vic-En Nuen
J. Orphemy Olourafe
Vicas Mighty
Orbanmi Adetchu
Philip J. Tobin
J. Orphemy Olourafe
Vicas Mighty
Orbanmi Adetchu
Philip J. Tobin
Application Number:
JP10568498A
Publication Date:
January 05, 2011
Filing Date:
March 31, 1998
Export Citation:
Assignee:
Freescale Semiconductor, Inc.
International Classes:
H01L29/78; H01L21/28; H01L21/285; H01L21/768; H01L21/8234; H01L21/8244; H01L23/31; H01L29/49
Domestic Patent References:
| JP7030108A | ||||
| JP8236479A | ||||
| JP3114267A | ||||
| JP10270688A |
Attorney, Agent or Firm:
Mamoru Kuwagaki