メトロロジーツール、リソグラフィ装置およびメトロロジーツールを備えるシステム、および、基板のパラメータを決定する方法

Japanese Patent JP4639214

B2

A metrology tool (2) is arranged to measure a parameter of a substrate that has been provided with a pattern in a lithographic apparatus. The metrology tool (2) includes a base frame (5), a substrate table (10) constructed and arranged to hold the substrate (9), at least one sensor (7) constructed and arranged to measure a parameter of the substrate (9), a displacement system (6) to displace one of the substrate table (10) and sensor (7) with respect to the other one of the substrate table (10) and sensor (7) in at least a first direction, a first balance mass, and a first bearing which movably supports the first balance mass so as to be substantially free to translate in the opposite direction of the first direction in order to counteract a displacement of the one of the substrate table and sensor in the first direction.

WO/2021/164973	SUBSTRATE TABLE AND METHOD OF HANDLING A SUBSTRATE
JP2006156864	RESIST PATTERN LINE WIDTH CALCULATING METHOD, MASK PATTERN LINE WIDTH CORRECTION METHOD, OPTICAL PROXIMITY EFFECT CORRECTION METHOD, EXPOSURE MASK FABRICATING METHOD, ELECTRON DRAWING METHOD FOR FABRICATING THE EXPOSURE MASK, EXPOSURE METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
JP5013657	How to control semiconductor process parameters

Plug, rainer, taeun
Den bouff, allie, jeffrey
Van der must, carrel, diederick

JP2007137324A

February 23, 2011

May 24, 2007

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AS M Netherlands B.V.

G03F7/20; H01L21/027; H01L21/68

JP2000331931A

WO2004105105A1

Yoshiyuki Inaba
Shinji Oga
Toshifumi Onuki

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