Title:
誘電膜工程を単純化して半導体素子のキャパシタを製造する方法及びその誘電膜を形成する装置
Document Type and Number:
Japanese Patent JP4642340
Kind Code:
B2
Abstract:
In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.
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Inventors:
Chung You Country
Yoon Myone
Former cough Shun
Big swing
Yoon Myone
Former cough Shun
Big swing
Application Number:
JP2003393511A
Publication Date:
March 02, 2011
Filing Date:
November 25, 2003
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
H01L27/04; H01L21/02; H01L21/31; H01L21/314; H01L21/316; H01L21/822; H01L21/8242; H01L27/108
Domestic Patent References:
| JP9121035A | ||||
| JP2000223669A | ||||
| JP2002305195A | ||||
| JP2001237401A |
Attorney, Agent or Firm:
Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii