Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SRAM素子及びその製造方法
Document Type and Number:
Japanese Patent JP4648296
Kind Code:
B2
Abstract:
Disclosed is a static random access memory (SRAM), which includes first and second access transistors composed of metal oxide semiconductor (MOS) transistors, first and second drive transistors composed of MOS transistors, and first and second p-channel thin film transistors (TFTs) used as pull-up devices. The SRAM includes a ground potential layer disposed as a common source of the first and second drive transistors, and formed by implanting a dopant into a semiconductor substrate, a power supply potential layer connected with sources of the first and second p-channel TFTs, and an insulating layer formed on the substrate and interposed between the ground potential layer and the power supply potential layer.

Inventors:
Park, Sun Hee
Application Number:
JP2006339792A
Publication Date:
March 09, 2011
Filing Date:
December 18, 2006
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Tobu Electronics Co., Ltd.
International Classes:
H01L27/11; H01L21/8244
Domestic Patent References:
JP6502963A
JP2172273A
JP4061160A
JP6112439A
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa



 
Previous Patent: 蒸発燃料処理装置

Next Patent: シート搬送装置