Title:
電界効果トランジスタのゲート・トンネル漏れのパラメータを測定するための方法及び構造体
Document Type and Number:
Japanese Patent JP4653217
Kind Code:
B2
Abstract:
A structure and method for measuring leakage current. The structure includes: a body formed in a semiconductor substrate; a dielectric layer on a top surface of the silicon body; and a conductive layer on a top surface of the dielectric layer, a first region of the dielectric layer having a first thickness and a second region of the dielectric layer between the conductive layer and the top surface of the body having a second thickness, the second thickness different from the first thickness. The method includes, providing two of the above structures having different areas of first and the same area of second or having different areas of second and the same area of first dielectric regions, measuring a current between the conductive layer and the body for each structure and calculating a gate tunneling leakage current based on the current measurements and dielectric layer areas of the two devices.
Inventors:
No Work, Edward, Jay
Na, Myung, Ha
Na, Myung, Ha
Application Number:
JP2008511261A
Publication Date:
March 16, 2011
Filing Date:
May 09, 2006
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L29/786; H01L21/66; H01L21/822; H01L27/04; H01L27/12
Domestic Patent References:
| JP2004259847A | ||||
| JP11126815A | ||||
| JP2002359307A | ||||
| JP2004247504A |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Tasaichi Tanae
Yoshihiro City