Title:
単結晶の製造方法およびアニールウェーハの製造方法ならびにアニールウェーハ
Document Type and Number:
Japanese Patent JP4661204
Kind Code:
B2
Abstract:
The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals 3 from a raw material melt 4 in a same crucible in a chamber by a Czochralski method, comprising steps of: pulling a single crystal 3 from a raw material melt 4; then additionally charging polycrystalline raw material in a residual raw material melt 4 without turning off power of a heater 7, and melting the polycrystalline raw material; then pulling a next single crystal 3; and repeating the steps and thereby pulling the plurality of single crystals 3; wherein in a case of setting a ratio of a pulling rate V and crystal temperature gradient G near a solid-liquid interface along a pulling axis direction when a straight body of the single crystal 3 is grown to be V/G, in order to control the V/G of each of the single crystals 3 to be pulled to a predetermined value, a pulling condition such as the pulling rate V is preliminarily modified according to an elapsed time from beginning of operation, before pulling the single crystal; and thereby the single crystal 3 having a desired defect region is grown. Thereby, a method for producing a single crystal by which wafer products of desired quality are produced in large quantity and stably is provided.
More Like This:
Inventors:
Ryoji Hoshi
Takahiro Yanagimachi
Takahiro Yanagimachi
Application Number:
JP2004363916A
Publication Date:
March 30, 2011
Filing Date:
December 16, 2004
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B15/20; C30B29/06; C30B33/02
Domestic Patent References:
| JP2001342097A | ||||
| JP2000178099A | ||||
| JP2004134439A | ||||
| JP2002184779A |
Attorney, Agent or Firm:
Mikio Yoshimiya