Title:
半導体ウェーハ表面の欠陥評価方法
Document Type and Number:
Japanese Patent JP4671183
Kind Code:
B2
Inventors:
Tomoaki Tajiri
Kosuke Miyoshi
Takahiro Kanda
Kei Matsumoto
Yasuhiro Shimada
Kosuke Miyoshi
Takahiro Kanda
Kei Matsumoto
Yasuhiro Shimada
Application Number:
JP2002273572A
Publication Date:
April 13, 2011
Filing Date:
September 19, 2002
Export Citation:
Assignee:
sumco tech xiv Co., Ltd.
International Classes:
H01L21/66
Domestic Patent References:
| JP200276082A | ||||
| JP200220200A | ||||
| JP2001313324A | ||||
| JP6199845A | ||||
| JP6213045A | ||||
| JP11354599A | ||||
| JP4368146A |
Other References:
Yoshio Yanase et.al.、「Atomic Force Microscope Observation of the Change in Shape and Subsequent Disappearance of “Crystal-Originated Particles” after Hydrogen-Atmosphere Thermal Annealing」、JAPANESE JOURNAL OF APPLIED PHYSICS 、Vol.37 No.1(January 1998)pp.1-4
Attorney, Agent or Firm:
Takahisa Kimura
Yoshiyuki Obata
Yoshiyuki Obata