Title:
マルチビットフラッシュメモリデバイスの高性能な書込方法及びシステム
Document Type and Number:
Japanese Patent JP4674234
Kind Code:
B2
Abstract:
Methods and circuits for performing high speed write (programming) operations in a dual-bit flash memory array. The method includes, for example, erasing a first and second bit of each cell in the array to a first state, programming the first bit of each cell in the array to a second state, and subsequently programming the second bit of one or more cells in the array to one of the first and second state according to the user's data, resulting in fast write (programming) of those second bits. In addition, the circuit includes, for example, a core cell array having dual-bit flash memory cells configured into a plurality of array portions. The circuit further includes a control circuit configured to selectively block erase one of the array portions, wherein in a first phase of the block erase both first and second bit locations of each dual-bit flash memory cell in the one array portion have sufficient charge removed therefrom to achieve a first state. The control circuit is further configured to, in a second phase of the block erase, supply charge to the first bit location of each dual-bit flash memory cell of the one array portion to enable subsequently fast-write of user's data to the second bit location.
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Inventors:
Randolph, Mark
Hamilton, Darren
Cornitz, Ronnie
Hamilton, Darren
Cornitz, Ronnie
Application Number:
JP2007508335A
Publication Date:
April 20, 2011
Filing Date:
February 11, 2005
Export Citation:
Assignee:
Spansion LLC
International Classes:
G11C16/02; G11C11/56; G11C16/04; G11C16/10
Domestic Patent References:
| JP2004079602A | ||||
| JP2001202788A |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa