Title:
窒化物系半導体素子およびその製造方法
Document Type and Number:
Japanese Patent JP4676577
Kind Code:
B2
Abstract:
A light-emitting apparatus of the present invention includes: a mounting base 260 which has a wire 265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base 260. The nitride-based semiconductor light-emitting device 100 includes a GaN-based substrate 10 which has an m-plane surface 12, a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN-based substrate 10, and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32. The Mg layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20. The electrode 30 is coupled to the wire 265.
Inventors:
Akira Inoue
Masaki Fujikin
Toshiya Yokokawa
Masaki Fujikin
Toshiya Yokokawa
Application Number:
JP2010532359A
Publication Date:
April 27, 2011
Filing Date:
April 05, 2010
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01L33/32; H01L21/28; H01L33/16; H01L33/40; H01L33/62; H01S5/042; H01S5/343
Domestic Patent References:
| JP2001160656A | 2001-06-12 | |||
| JP2008300638A | 2008-12-11 | |||
| JPH07283436A | 1995-10-27 | |||
| JP2008235804A | 2008-10-02 | |||
| JP2008153285A | 2008-07-03 | |||
| JPH1084159A | 1998-03-31 | |||
| JPH0864871A | 1996-03-08 |
Attorney, Agent or Firm:
Seiji Okuda