To provide method of selectively segregate impurity element and permit the formation of fine element in a deep submicron region, in the manufacturing method of semiconductor device.
The problem is solved by the manufacturing method of a semiconductor device, having a silicon oxide film formed on a silicon substrate and a single crystal silicon layer formed on the silicon oxide film, wherein impurity element is implanted into the single crystal silicon layer and an electrically inactive element is implanted into the single crystal silicon layer, then, the single crystalline silicon layer is oxidized thermally to form an oxidized region selectively in the region, into which the inactive element is implanted, to segregate the impurity element in the oxidized region.
COPYRIGHT: (C)2011,JPO&INPIT
Hisashi Otani
Jun Koyama
Kenji Fukunaga
| JP8032081A |