To reduce the size and weight of a semiconductor image sensor module.
A semiconductor image sensor module 31 comprises at least a semiconductor image sensor 234 which is provided with the formation region of a means for reading signal charges on the first main surface side of a semiconductor substrate, and a photoelectric conversion region, having a light incidence surface on the second main surface on the side opposite to the first main surface of the semiconductor substrate. The semiconductor image sensor 34 is so fixed, on a transparent substrate 33, that the second main surface of the semiconductor image sensor 34 faces the transparent substrate 33. An electrode pad, formed on the surface of the first main surface side of the semiconductor image sensor 34, is electrically connected to a conductive pattern 32 formed on the transparent substrate 33.
COPYRIGHT: (C)2006,JPO&NCIPI
Yamanaka Masamitsu
JP2003031785A | ||||
JP61199059U | ||||
JP1179356A | ||||
JP8172177A |
WO2003019668A1 |