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Title:
半導体イメージセンサ・モジュール
Document Type and Number:
Japanese Patent JP4720120
Kind Code:
B2
Abstract:

To reduce the size and weight of a semiconductor image sensor module.

A semiconductor image sensor module 31 comprises at least a semiconductor image sensor 234 which is provided with the formation region of a means for reading signal charges on the first main surface side of a semiconductor substrate, and a photoelectric conversion region, having a light incidence surface on the second main surface on the side opposite to the first main surface of the semiconductor substrate. The semiconductor image sensor 34 is so fixed, on a transparent substrate 33, that the second main surface of the semiconductor image sensor 34 faces the transparent substrate 33. An electrode pad, formed on the surface of the first main surface side of the semiconductor image sensor 34, is electrically connected to a conductive pattern 32 formed on the transparent substrate 33.

COPYRIGHT: (C)2006,JPO&NCIPI


Inventors:
Ikuo Yoshihara
Yamanaka Masamitsu
Application Number:
JP2004207559A
Publication Date:
July 13, 2011
Filing Date:
July 14, 2004
Export Citation:
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Assignee:
ソニー株式会社
International Classes:
H01L27/14; H04N5/335; H04N5/369; H04N5/374
Domestic Patent References:
JP2003031785A
JP61199059U
JP1179356A
JP8172177A
Foreign References:
WO2003019668A1
Attorney, Agent or Firm:
Shinto International Patent Office



 
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