Title:
MOSFET
Document Type and Number:
Japanese Patent JP4731796
Kind Code:
B2
Inventors:
Enkai
Mitsuhiro Yoshimura
Mitsuhiro Yoshimura
Application Number:
JP2003094973A
Publication Date:
July 27, 2011
Filing Date:
March 31, 2003
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L29/78; H01L29/06
Domestic Patent References:
| JP10056174A | ||||
| JP2002134749A | ||||
| JP1248564A | ||||
| JP2003008014A | ||||
| JP3180074A | ||||
| JP2001007322A |
Attorney, Agent or Firm:
Hiroshi Kakutani