To provide a photoelectric conversion element with an end side face of different taper angle through gradual photoelectric conversion layer etching.
A pin-type photoelectric conversion element is faster in responsiveness than a pn-type photoelectric conversion element but it has a great drawback of dark current. A cause for this dark current is that an etching residue stacks at the end side face of a photoelectric conversion layer as a result of etching and electric conduction occurs via the etching residue. To cope with this problem, the end side face is taper shaped with two stages unlike a conventional single face taper shape and the end side faces of p and n layers in the photoelectric conversion layer are not placed on the same surface, resulting in leak current reduction in the photoelectric conversion element.
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