半導体装置及びその製造方法

Title:

半導体装置及びその製造方法

Document Type and Number:

Japanese Patent JP4751340

Kind Code:

B2

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Inventors:

Tomoko Suedai
Hidetaka Hattori
Akio Nakagawa

Application Number:

JP2007001608A

Publication Date:

August 17, 2011

Filing Date:

January 09, 2007

Export Citation:

Assignee:

Toshiba Corporation

International Classes:

H01L29/739; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/78

Domestic Patent References:

Foreign References:

WO1999005713A1

Attorney, Agent or Firm:

Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Sadao Muramatsu
Ryo Hashimoto

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