ナノチューブ領域を用いて熱ヒートシンク作用を補助する電子デバイス及びその製造方法

Japanese Patent JP4754483

B2

A semiconductor device die (10, 116) is disposed on a heat-sinking support structure (30, 100). Nanotube regions (52, 120) contain nanotubes (54, 126) are arranged on a surface of or in the heatsinking support structure (30, 100). The nanotube regions (52, 120) are arranged to contribute to heat transfer from the semiconductor device die (10, 116) to the heat-sinking support structure (30, 100). In one embodiment, the semiconductor device die (10) includes die electrodes (20, 22), and the support structure (30) includes contact pads (40, 42) defined by at least some of the nanotube regions (52). The contact pads (40, 42) electrically and mechanically contact the die electrodes (20, 22). In another embodiment, the heat-sinking support structure (100) includes microchannels (120) arranged laterally in the support structure (100). At least some of the nanotube regions are disposed inside the microchannels (100).

Arick Mehmet
Weaver Stanton E Junior
Carnahan james sea
Becker Charles A
Gerstler William Dee

JP2006518865A

August 24, 2011

July 07, 2004

Click for automatic bibliography generation  

Lumination LLC

H01L23/36; B82B3/00; F28F13/18; H01L23/373; H01L23/473; H01L23/485; H01L33/62; H01L33/64

JPH06342795A	1994-12-13
JP2002335014A	2002-11-22
JP2003142679A	2003-05-16
JP2002141633A	2002-05-17
JP2001217467A	2001-08-10
JP2003008083A	2003-01-10
JP2005502792A	2005-01-27
JP2004528727A	2004-09-16
JP2003512286A	2003-04-02
JP2004104004A	2004-04-02
JP2003249613A	2003-09-05
JP2004140356A	2004-05-13

WO2003004741A1	2003-01-16
WO2002099845A2	2002-12-12
WO2002059392A1	2002-08-01
US6407922B1	2002-06-18
DE19832970A1	1999-11-04

Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda

Previous Patent: 外部合図型航空機警報及び防御

Next Patent: うつ様症状改善剤