Title:
CMP研磨剤及び基板の研磨方法
Document Type and Number:
Japanese Patent JP4755984
Kind Code:
B2
Abstract:
A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference.
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Inventors:
Fukasawa Masato
Naoyuki Koyama
Koji Haga
Toshiaki Akutsu
Naoyuki Koyama
Koji Haga
Toshiaki Akutsu
Application Number:
JP2006523471A
Publication Date:
August 24, 2011
Filing Date:
September 27, 2005
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
H01L21/304; B24B37/00; C09K3/14
Domestic Patent References:
| JP2003347247A | ||||
| JP2000313815A | ||||
| JP2001107089A | ||||
| JP11293231A |
Attorney, Agent or Firm:
Hidekazu Miyoshi