Title:
通常の低温核生成層なしでのミスマッチした基板上におけるIII族窒化物フィルムの成長
Document Type and Number:
Japanese Patent JP4757441
Kind Code:
B2
Abstract:
A method of forming a light emitting device includes providing a sapphire substrate, growing an Al 1-x Ga x N first layer by vapor deposition on the substrate at a temperature between about 1000°C and about 1180°C, and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.
Inventors:
Junko Kobayashi
Warner Kay Getz
Warner Kay Getz
Application Number:
JP2003411387A
Publication Date:
August 24, 2011
Filing Date:
December 10, 2003
Export Citation:
Assignee:
Philips Lumileds Lighting Company Limited Liability Company
International Classes:
H01L33/32; C30B25/02; H01L21/20; H01L21/205; H01L33/00
Domestic Patent References:
| JP2001015443A | ||||
| JP2001044123A | ||||
| JP7321374A | ||||
| JP2002198560A |
Other References:
T. Yang et al.,Control of Initial Nucleation by Reducing the V/III Ratio during the Early Stages of GaN Growth,physica status solidi (a),2000年,Volume 180 Issue 1,Pages 45-50
Y. Ohba et al.,Growth of AlN on sapphire substrates by usinga thin AlN buffer layer grown two-dimensionally at a very low V/III ratio,Journal of Crystal Growth 221,2000年,v.221,pp.258-261
Philip R. Tavernier et al.,Progress Toward Making Gallium Nitride Seed Crystals Using Hydride Vapor-Phase Epitaxy,Journal of the American Ceramic Society,2002年 1月,Volume 85 Issue 1,Pages 49-54
Shulin Gu et al.,The impact of initial growth and substrate nitridation on thickGaN growth on sapphire by hydride vapor phase epitaxy,Journal of Crystal Growth,2001年,v.231,pp.342-351
Y. Ohba et al.,Growth of AlN on sapphire substrates by usinga thin AlN buffer layer grown two-dimensionally at a very low V/III ratio,Journal of Crystal Growth 221,2000年,v.221,pp.258-261
Philip R. Tavernier et al.,Progress Toward Making Gallium Nitride Seed Crystals Using Hydride Vapor-Phase Epitaxy,Journal of the American Ceramic Society,2002年 1月,Volume 85 Issue 1,Pages 49-54
Shulin Gu et al.,The impact of initial growth and substrate nitridation on thickGaN growth on sapphire by hydride vapor phase epitaxy,Journal of Crystal Growth,2001年,v.231,pp.342-351
Attorney, Agent or Firm:
Sadao Kumakura
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima