Title:
製造中に半導体デバイスの電気的特性を予測する方法及びシステム
Document Type and Number:
Japanese Patent JP4771696
Kind Code:
B2
Abstract:
A method includes providing a set of initial characteristic values associated with the semiconductor device. A first fabrication process is performed on the semiconductor device. Fabrication data associated with the first fabrication process is collected. At least one of the initial characteristic values is replaced with the fabrication data collected for the first fabrication process to generate a first modified set of characteristic values. A first value for at least one electrical characteristic of the semiconductor device is predicted based on the modified set of characteristic values. A system includes a first process tool, a first data collection unit, and a prediction unit. The first process tool is configured to perform a first fabrication process on the semiconductor device. The first data collection unit is configured to collect fabrication data associated with the first fabrication process. The prediction unit is configured to provide a set of initial characteristic values associated with the semiconductor device, replace at least one of the initial characteristic values with the fabrication data collected for the first fabrication process to generate a first modified set of characteristic values, and predict a first value for at least one electrical characteristic of the semiconductor device based on the modified set of characteristic values.
Inventors:
Michael Elle Miller
Christopher A. Board
Christopher A. Board
Application Number:
JP2004530817A
Publication Date:
September 14, 2011
Filing Date:
July 09, 2003
Export Citation:
Assignee:
ADVANCED MICRO DEVICES INCORPORATED
International Classes:
H01L21/66; H01L21/00; H01L21/02
Domestic Patent References:
| JPH10321485A | 1998-12-04 | |||
| JPH09266235A | 1997-10-07 | |||
| JPH07335704A | 1995-12-22 | |||
| JPH10335193A | 1998-12-18 |
Attorney, Agent or Firm:
Yuji Hayakawa
Keisuke Murasame
Ryota Sano
Keisuke Murasame
Ryota Sano