Title:
研磨制御のための方法および器具
Document Type and Number:
Japanese Patent JP4777658
Kind Code:
B2
Abstract:
A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.
Inventors:
Biran, Manuchel
Chang, David, A.
Smecharin, Constantine, Wye.
Chang, David, A.
Smecharin, Constantine, Wye.
Application Number:
JP2004555571A
Publication Date:
September 21, 2011
Filing Date:
November 21, 2003
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/304; B24B37/04; B24B49/12
Domestic Patent References:
| JPH08288245A | 1996-11-01 | |||
| JPH11325840A | 1999-11-26 |
Foreign References:
| US20020005957A1 | 2002-01-17 |
Attorney, Agent or Firm:
Sonoda Yoshitaka
Kobayashi Yoshinori
Kobayashi Yoshinori