Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4780905
Kind Code:
B2
Abstract:
The method involves arranging trenches formed in a substrate in a direction, where source and drain regions extend in parallel. Impurity ions are implanted in the regions near the lateral faces of each trench parallel to the direction and applied in the directions oblique with respect to the faces. The ions are implanted in a region near a base region of each trench and applied perpendicularly to the base region.
Inventors:
Masaharu Yamaji
Akio Kitamura
Naoto Fujishima
Akio Kitamura
Naoto Fujishima
Application Number:
JP2003178384A
Publication Date:
September 28, 2011
Filing Date:
June 23, 2003
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L21/265
Domestic Patent References:
| JP2003037267A | ||||
| JP4209573A |
Attorney, Agent or Firm:
Yoichi Matsumoto