Title:
被膜窒化方法、被膜形成基板および窒化処理装置
Document Type and Number:
Japanese Patent JP4783895
Kind Code:
B2
Inventors:
Atsushi Yokotani
Application Number:
JP2005254698A
Publication Date:
September 28, 2011
Filing Date:
September 02, 2005
Export Citation:
Assignee:
National University Corporation Miyazaki University
International Classes:
H01L21/318; H01L29/78
Domestic Patent References:
| JP2005045222A | ||||
| JP2050428A | ||||
| JP60085534A | ||||
| JP56029337A | ||||
| JP11204512A | ||||
| JP63239811A |
Other References:
Toshihiro Sugii, Takashi Ito, and Hajime Ishikawa,Excimer laser enhanced nitridation of silicon substrates,Appl. Phys. Lett.,米国,1984年11月 1日,45(9),966-968
ISHIKAWA Y, KOBAYASHI I, NAKAMICHI I (Nippon Inst. Technology, Saitama),Enhanced-Nitridation of Silicon by UV-Irradiation.,Jpn J Appl Phys Part 2,日本,1992年 4月15日,Vol.31 No.4B,Page.L443-L445
ISHIKAWA Y, KOBAYASHI I, NAKAMICHI I (Nippon Inst. Technology, Saitama),Enhanced-Nitridation of Silicon by UV-Irradiation.,Jpn J Appl Phys Part 2,日本,1992年 4月15日,Vol.31 No.4B,Page.L443-L445
Attorney, Agent or Firm:
Kamei Takeyuki