Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP4792143
Kind Code:
B2
Abstract:
A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.
Inventors:
Tetsuo Fujii
Kazuhiko Sugiura
Kazuhiko Sugiura
Application Number:
JP2007257840A
Publication Date:
October 12, 2011
Filing Date:
October 01, 2007
Export Citation:
Assignee:
株式会社デンソー
International Classes:
B81B3/00; B81C3/00; G01P15/08; H01L21/76; H01L23/02; H01L27/12; H01L29/84
Domestic Patent References:
| JP2006275660A | ||||
| JP2006517339A | ||||
| JP2005166909A | ||||
| JP2007994A | ||||
| JP2004333133A | ||||
| JP2004209585A | ||||
| JP2006128683A |
Foreign References:
| WO2005045885A2 | ||||
| WO2004108585A2 | ||||
| WO2005102911A1 |
Attorney, Agent or Firm:
Kazuyuki Yahagi
Taihei Nonobe
Takanori Kubo
Taihei Nonobe
Takanori Kubo