Document Type and Number:
Japanese Patent JP4793773
Kind Code:
B2
Abstract:
To provide a method for manufacturing a ZnO-based sputtering target which contains neither ZnS nor SiO2and in which influences such as heating on a substrate are reduced when depositing a film by sputtering, high-speed film deposition is realized, the film thickness is adjusted thin, particles (dust) and nodules generated during the sputtering are reduced, dispersion in quality is reduced, mass productivity is enhanced, crystal grains are fine, and the sputtering target of the density as high as ≤80%, in particular, as high as ≤90% is obtained.
In the sputtering target manufacturing method, the obtained sputtering target contains a compound mainly consisting of zinc oxide to satisfy AXBYO(KaX + KbY)/2(ZnO)m, (0 < X < 2, Y = 2-X, 1 ≤ m), where A and B are positive elements which are at least trivalent and different from each other, Ka and Kb denote the valences thereof, and the relative density thereof is ≥ 80%. The average particle diameter of the oxides of each component element or composite oxide powder is ≤ 5 μm at least before a normal-pressure sintering step or a high-temperature pressurized sintering step.
COPYRIGHT: (C)2004,JPO&NCIPI
Inventors:
Hideo Hosono
Ueda Kamo
Masataka Yahagi
Hideo Takami
Application Number:
JP2003056979A
Publication Date:
October 12, 2011
Filing Date:
March 04, 2003
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
C04B35/453; C23C14/34; C23C14/08; G11B7/254; G11B7/257; G11B7/26
Domestic Patent References:
Attorney, Agent or Firm:
Isamu Ogoshi
