Title:
炭化珪素からなる基板へのオーミック接続形成方法
Document Type and Number:
Japanese Patent JP4801805
Kind Code:
B2
Abstract:
A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.
Inventors:
Marupan Rajesh Kumar
Yuichi Takeuchi
Irina Nikitina
Konstantin Vasilevski
Nicholas light
Alton Horsefall
Yuichi Takeuchi
Irina Nikitina
Konstantin Vasilevski
Nicholas light
Alton Horsefall
Application Number:
JP2005175739A
Publication Date:
October 26, 2011
Filing Date:
June 15, 2005
Export Citation:
Assignee:
株式会社デンソー
ユニバーシテイ・オブ・ニユーキヤツスル
ユニバーシテイ・オブ・ニユーキヤツスル
International Classes:
H01L21/28; H01L21/04; H01L29/417; H01L29/45; H01L29/739; H01L29/78
Domestic Patent References:
| JP2196421A | ||||
| JP2006024880A | ||||
| JP2004327601A |
Attorney, Agent or Firm:
Kazuyuki Yahagi