Title:
光半導体素子及びその製造方法
Document Type and Number:
Japanese Patent JP4817255
Kind Code:
B2
Abstract:
An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.
Inventors:
Nobuaki Hatori
Takeyuki Yamamoto
Yasuhiko Arakawa
Takeyuki Yamamoto
Yasuhiko Arakawa
Application Number:
JP2006336800A
Publication Date:
November 16, 2011
Filing Date:
December 14, 2006
Export Citation:
Assignee:
富士通株式会社
国立大学法人 東京大学
国立大学法人 東京大学
International Classes:
H01S5/12
Domestic Patent References:
| JP8167759A | ||||
| JP2004327545A | ||||
| JP59152686A | ||||
| JP2005353761A |
Attorney, Agent or Firm:
Keishiro Takahashi
Mikio Kuruyama
Mikio Kuruyama