Title:
III族窒化物半導体層の形成方法、III族窒化物半導体基板の製造方法
Document Type and Number:
Japanese Patent JP4885507
Kind Code:
B2
Inventors:
Yujiro Ishihara
Haruo Sunagawa
Akira Usui
Haruo Sunagawa
Akira Usui
Application Number:
JP2005292297A
Publication Date:
February 29, 2012
Filing Date:
October 05, 2005
Export Citation:
Assignee:
Furukawa Metal Co., Ltd.
International Classes:
C30B29/38; C30B25/18; H01L21/205
Domestic Patent References:
| JP2003055097A | ||||
| JP2002329672A | ||||
| JP2004193371A |
Attorney, Agent or Firm:
Shinji Hayami