To provide a light emitting element which comprises a light emitting element section having an organic light emitting layer and a transistor element section having an organic semiconductor layer and which is not influenced by a capacity component in the organic light emitting or semiconductor layer.
A light emitting element 1A comprises a vertical transistor element section 20 and a light emitting element section 10. The vertical transistor element section 20 at least includes an emitter electrode 21, a collector electrode 22, organic semiconductor layers 24A, 24B provided for the both electrodes 21, 22, and a base electrode 23 provided in the organic semiconductor layers 24A, 24B. The light emitting element section 10 includes an organic light emitting layer 16 provided between the organic semiconductor layer 24B and the collector electrode 22 in the vertical transistor element section 20. The vertical transistor element section 20 has a surface area smaller than that of the light emitting element section 10 when viewed from its top. The light emitting element section 10 has an equipotential layer 14 at its side contacted with the vertical transistor element section 20. With such an arrangement, it is preferable that a ratio S1/S2 between a surface area S1 of the vertical transistor element section and a surface area S2 of the light emitting element section be not smaller than 1/20 and not larger than 1/2.
COPYRIGHT: (C)2009,JPO&INPIT
Shinya Fujimoto
| JP2005293980A | ||||
| JP2007258308A |