Title:
基板上に応力をもたせた物質を形成する方法
Document Type and Number:
Japanese Patent JP4903154
Kind Code:
B2
Abstract:
A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.
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Inventors:
Barcine, Mihaela
Jun, Key, Bam
Hoang, Rehoa, Lee
Sha, Lee-Kun
One, Rompin
Whitty, Derek, Earl.
Stern, lewis
Seamons, Martin, Jay
Masad, Hichem
Kwan, Michael, Chiu
Jun, Key, Bam
Hoang, Rehoa, Lee
Sha, Lee-Kun
One, Rompin
Whitty, Derek, Earl.
Stern, lewis
Seamons, Martin, Jay
Masad, Hichem
Kwan, Michael, Chiu
Application Number:
JP2007543146A
Publication Date:
March 28, 2012
Filing Date:
November 10, 2005
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/318; H01L21/768; H01L21/8238; H01L23/522; H01L27/092; H01L29/78
Domestic Patent References:
| JP2007536736A | ||||
| JP8203894A | ||||
| JP5102137A | ||||
| JP1251723A |
Attorney, Agent or Firm:
Koichi Tsujii
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi