Title:
パワー半導体モジュール及びその製法
Document Type and Number:
Japanese Patent JP4906650
Kind Code:
B2
Abstract:
To provide an epoxy resin sealed type large-capacity three-phase IGBT module which is compact and has high output, high reliability, and long life.
In a structure which can be made low in thermal resistance since a metal cladded ceramics substrate to which a power semiconductor chip is bonded is soldered to a copper base to dissipate heat is divided, an area is divided for each ceramic substrate or every two ceramic substrates constituting one phase circuit, and transfer-molded, and a resin flow area is formed partially between divided areas so that a resin can flow between the areas during the transfer molding.
COPYRIGHT: (C)2009,JPO&INPIT
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Inventors:
Akihiro Tamba
Kazuhiro Suzuki
Kazuhiro Suzuki
Application Number:
JP2007236092A
Publication Date:
March 28, 2012
Filing Date:
September 12, 2007
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L25/07; H01L21/56; H01L23/28; H01L23/29; H01L25/18
Domestic Patent References:
| JP2000049271A | ||||
| JP2003037241A | ||||
| JP9232341A | ||||
| JP2003289085A | ||||
| JP2004039800A | ||||
| JP2004111560A | ||||
| JP10093016A |
Foreign References:
| WO1998010508A1 |
Attorney, Agent or Firm:
Manabu Inoue
Yuji Toda
Yuji Toda